2
C4D30120D Rev. B
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward
Voltage
1.6
2.3
1.8
3
V
IF
= 15 A T
J=25°C
IF
= 15 A T
J=175°C
IR
Reverse
Current
35
120
200
300
μA
VR
= 1200 V T
J=25°C
VR
= 1200 V T
J=175°C
QC
Total
Capacitive
Charge
77.5
nC
VR
=
800
V,
IF
= 15A
di/dt
=
200
A/μs
TJ
=
25°C
C
Total
Capacitance
1200
70
50
pF
VR
=
0
V,
TJ
=
25°C,
f
=
1
MHz
VR
=
400
V,
TJ
=
25?C,
f
=
1
MHz
VR
=
800
V,
TJ
=
25?C,
f
=
1
MHz
1.
Note:This
is
a
majority
carrier
diode,
so
there
is
no
reverse
recovery
charge.
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
Thermal
Resistance
from
Junction
to
Case
0.34**
0.68*
°C/W
**
**
Per
Device,
*
Per
Leg
Typical Performance (Per Leg)
Figure
1.
Forward
Characteristics
Figure
2.
Reverse
Characteristics
TJ=-55°C
TJ=
25°C
TJ=
75°C
TJ
=125°C
TJ
=175°C
I
F
(A)
VF
(V)
0.8
1
1.2
1.4
1.6
1.8
2
0
0.2
0.4
0.6
200 400 600 800 1000 1200 1400 1600 1800
TJ=-55°C
TJ=
25°C
TJ=
75°C
TJ
=125°C
TJ
=175°C
VR
(V)
I
R
(mA)
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相关PDF资料
C4D40120D
DIODE ARR SIC 1200V 27A TO247-3
CA56-11EWA
DISPLAY 627NM RED 4DIG 0.56" TH
CA56-11GWA
DISPLAY 565NM GRN 4DIG 0.56" TH
CA56-11SRWA
DISPLAY 660NM RED 4DIG 0.56" TH
CA56-11YWA
DISPLAY 590NM YLW 4DIG 0.56" TH
CC56-11EWA
DISPLAY 627NM RED 4DIG 0.56" TH
CC56-11GWA
DISPLAY 565NM GRN 4DIG 0.56" TH
CC56-11SRWA
DISPLAY 660NM RED 4DIG 0.56" TH
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